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WNMD6003 Datasheet, MOSFET, Will Semiconductor

WNMD6003 Datasheet, MOSFET, Will Semiconductor

WNMD6003

datasheet Download (Size : 1.50MB)

WNMD6003 Datasheet
WNMD6003

datasheet Download (Size : 1.50MB)

WNMD6003 Datasheet

WNMD6003 Features and benefits

WNMD6003 Features and benefits


* Trench Technology
* Supper high density cell design
* Excellent ON resistance for higher DC current
* Extremely Low Threshold Voltage
* Small packag.

WNMD6003 Application

WNMD6003 Application


* Driver for Relay, Solenoid, Motor, LED etc.
* DC-DC converter circuit
* Power Switch
* Load Switch

WNMD6003 Description

WNMD6003 Description

The WNMD6003 is Dual N-Channel enhancem -ent MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging .

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TAGS

WNMD6003
Dual
N-Channel
MOSFET
Will Semiconductor

Manufacturer


Will Semiconductor

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